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K6F1616R6C - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor

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K6F1616R6C 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F1616R6C

Datasheet Details

Part number	K6F1616R6C
Manufacturer	Samsung semiconductor
File Size	179.72 KB
Description	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F1616R6C Datasheet
Additional preview pages of the K6F1616R6C datasheet.

Product details

Description

The K6F1616R6C families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 1M x16.
Power Supply Voltage: 1.65~1.95V.
Low Data Retention Voltage: 1.0V(Min).
Three State Outputs.
Package Type: 48-FBGA-6.00 x 7.00 CMOS SRAM www. DataSheet4U. com.

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Published: Apr 23, 2010 |