K6F1616R6C Datasheet (Samsung semiconductor) - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1616R6C, 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F1616R6C families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

The families also support low data retention voltage for battery back-up operatio

K6F1616R6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM www.DataSheet4U.com Revision History Revision No.

History 0.0 0.1 Initial draft Revised - Changed ball name of E3 (Vss) & H6 (DNU) to NC.

- Deleted 85ns Speed bin.

Finalize - Deleted 55ns Speed bin.

Draft Date November 17, 2003 November 21, 2003 Remark Preliminary Preliminary 1.0 May 24, 2004 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO.,