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K6F1616T6B-EF70, K6F Datasheet - Samsung semiconductor

K6F1616T6B-EF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power an.
K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Changed Isb1(max.) from 25uA to 15uA Finalized - Added Package Type ’48-TBGA - 7.00x7.00’ Draft Date May 21, 2003 June 17, 2003 Remark Preliminary Preliminary 1.0 August 13, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifi.

K6F-1616.pdf

This datasheet PDF includes multiple part numbers: K6F1616T6B-EF70, K6F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

K6F1616T6B-EF70, K6F

Manufacturer:

Samsung semiconductor

File Size:

199.14 KB

Description:

1m x16 bit super low power and low voltage full cmos static ram.

Note:

This datasheet PDF includes multiple part numbers: K6F1616T6B-EF70, K6F.
Please refer to the document for exact specifications by model.

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K6F1616T6B-EF70 K6F x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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