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K6F1616T6B-EF70

1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1616T6B-EF70 Features

* Process Technology: Full CMOS

* Organization: 1M x16

* Power Supply Voltage: 2.7~3.6V

* Low Data Retention Voltage: 1.5V(Min)

* Three State Outputs

* Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fami

K6F1616T6B-EF70 General Description

The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power an.

K6F1616T6B-EF70 Datasheet (199.14 KB)

Preview of K6F1616T6B-EF70 PDF

Datasheet Details

Part number:

K6F1616T6B-EF70

Manufacturer:

Samsung semiconductor

File Size:

199.14 KB

Description:

1m x16 bit super low power and low voltage full cmos static ram.
K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0.

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TAGS

K6F1616T6B-EF70 x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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