K6F1616T6B-EF70, K6F 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

Description

K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No.History 0.0.
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

📥 Download Datasheet

K6F1616T6B-EF70 Datasheet Preview — This datasheet PDF includes multiple part numbers: K6F1616T6B-EF70, K6F. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K6F1616T6B-EF70, K6F
Manufacturer: Samsung semiconductor
File Size: 199.14 KB
Datasheet: K6F-1616.pdf
Description: 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Note: This datasheet PDF includes multiple part numbers: K6F1616T6B-EF70, K6F.
Please refer to the document for exact specifications by model.

Features

* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

K6F1616T6B-EF70 Distributors

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K6F x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

Samsung semiconductor K6F1616T6B-EF70-like datasheet