K6F1616T6B-EF70 Datasheet, Ram, Samsung semiconductor

K6F1616T6B-EF70 Features

  • Ram
  • Process Technology: Full CMOS
  • Organization: 1M x16
  • Power Supply Voltage: 2.7~3.6V
  • Low Data Retention Voltage: 1.5V(Min)
  • Three State Out

PDF File Details

Part number:

K6F1616T6B-EF70

Manufacturer:

Samsung semiconductor

File Size:

199.14kb

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📄 Datasheet

Description:

1m x16 bit super low power and low voltage full cmos static ram. The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating

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TAGS

K6F1616T6B-EF70
x16
bit
Super
Low
Power
and
Low
Voltage
Full
CMOS
Static
RAM
Samsung semiconductor

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