K6F4008R2C Datasheet - Samsung semiconductor

K6F4008R2C 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F4008R2C Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Errata correction - Change for tWP: 55 to 50ns for 70ns product - Change for tWHZ: 25 to 20ns for 70ns product Draft Date July 28, 1999 May 4, 2000 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and.

K6F4008R2C Features

* Process Technology: Full CMOS

* Organization: 512K x8 bit

* Power Supply Voltage: 1.65~2.2V

* Low Data Retention Voltage: 1.0V(Min)

* Three state output status and TTL Compatible

* Package Type: 48-FBGA-6.5

K6F4008R2C-Samsungsemiconductor.pdf

K6F4008R2C Datasheet Preview — Preview of K6F4008R2C PDF

Datasheet Details

Part number:

K6F4008R2C

Manufacturer:

Samsung semiconductor

File Size:

149.97 KB

Description:

512k x8 bit super low power and low voltage full cmos static ram.

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K6F4008R2C K6F4008R2C 512K bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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