K6F4008U2G 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

Description

K6F4008U2G Family Preliminary CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision N.
The K6F4008U2G families are fabricated by SAMSUNG′s advanced full CMOS process technology.

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Datasheet Specifications

Part number: K6F4008U2G
Manufacturer: Samsung semiconductor
File Size: 152.73 KB
Datasheet: K6F4008U2G-Samsungsemiconductor.pdf
Description: 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Features

* Process Technology: Full CMOS
* Organization: 512K x8 bit
* Power Supply Voltage: 2.7~3.3V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

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K6F4008U2G 512K bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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