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K6F4008U2E

512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F4008U2E Features

* Process Technology: Full CMOS

* Organization: 512K x8 bit

* Power Supply Voltage: 2.7~3.3V

* Low Data Retention Voltage: 1.5V(Min)

* Three State Outputs

* Package Type: 48(36)-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4008U2E families are fabricated

K6F4008U2E General Description

The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The f.

K6F4008U2E Datasheet (106.86 KB)

Preview of K6F4008U2E PDF

Datasheet Details

Part number:

K6F4008U2E

Manufacturer:

Samsung semiconductor

File Size:

106.86 KB

Description:

512k x8 bit super low power and low voltage full cmos static ram.
K6F4008U2E Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.

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K6F4008U2E 512K bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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