F10N65 Datasheet | Specifications & PDF Download

PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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OSPF10N65C http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche

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MDF10N65B N-channel MOSFET 650V MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description The MDF10N65B MOSFET are produced using advanced Ma

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AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOT10N65 & AOTF10N65 have been fabricated using an advanced hi

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AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOW10N65/AOWF10N65 is fabricated using an advanced high voltag

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PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low

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FQP10N65/FQPF10N65 650V,10A N-Channel MOSFET General Description Product Summary The FQP10N65 & FQPF10N65 have been fabricated using an advanced hi

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LIPTAI ■ Applications • Power factor correction（PFC） • Switched mode power supplies(SMPS) • Uninterruptible Power Supply（UPS） ■ Features • Low RDS(ON)

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=650V(Min.)  Low Crss : Crss=13pF(Typ.)  Low gate charge : Qg=45nC(Typ.)  Low RDS(o

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SEMICONDUCTOR TECHNICAL DATA KF10N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristic

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω Major Ratings and Characteristics Characteristics Values Units ID 10 A IDM 40 A VDS

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PJF10N65M 650V N-Channel Enhancement Mode MOSFET Voltage 650V Current 10 A ITO-220AB-F Features  RDS(ON), VGS@10V, ID@5A<0.85Ω  High switchi

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BRF10N65 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220FL N MOS 。N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,。 Low gate cha

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www.DataSheet.in F10N6 5 WF WFF 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43

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MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω Major Ratings and Characteristics Characteristics Values Units ID 10 A IDM 40 A VDS

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Silan Microelectronics SVF10N65CF/K/FJH_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CF/K/FJH is an N-channel enhancement mode

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