PFF10N65 - N-Channel MOSFET
PFF10N65 Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V APPLICATION High current, High speed
