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PFF12N65

650V N-Channel MOSFET

PFF12N65 Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed

PFF12N65 Datasheet (1.34 MB)

Preview of PFF12N65 PDF

Datasheet Details

Part number:

PFF12N65

Manufacturer:

Wing On

File Size:

1.34 MB

Description:

650v n-channel mosfet.

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PFF12N65 650V N-Channel MOSFET Wing On

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