PFF10N80E - N-Channel MOSFET
PFF10N80E Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 49.6 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.93 Ω (Typ.) @VGS=10V APPLICATION High current, High spe
