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PFF10N80E

N-Channel MOSFET

PFF10N80E Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 49.6 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.93 Ω (Typ.) @VGS=10V APPLICATION  High current, High spe

PFF10N80E Datasheet (922.07 KB)

Preview of PFF10N80E PDF

Datasheet Details

Part number:

PFF10N80E

Manufacturer:

Wing On

File Size:

922.07 KB

Description:

N-channel mosfet.

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PFF10N80E N-Channel MOSFET Wing On

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