PFF12N65E Datasheet, Mosfet, Wing On

PFF12N65E Features

• Mosfet  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 40 nC (T

PDF File Details

Part number:

PFF12N65E

Manufacturer:

Wing On

File Size:

848.46kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

PFF12N65E

Wing On

📁 Related Datasheet

PFF12N65 - 650V N-Channel MOSFET (Wing On)
PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF10N40 - N-Channel MOSFET (Wing On)
Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF10N60 - N-Channel MOSFET (Wing On)
Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF10N65 - N-Channel MOSFET (Wing On)
PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF10N80A - N-Channel MOSFET (Wing On)
PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFF10N80E - N-Channel MOSFET (Wing On)
PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFF13N50 - N-Channel MOSFET (Wing On)
Feb 2009 PFP13N50 / PFF13N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF13N50 - 500V N-Channel MOSFET (Power Device)
Feb 2009 PFP13N50/PFF13N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰.

PFF13N60 - N-Channel MOSFET (Wing On)
Feb 2009 PFP13N60 / PFF13N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF18N50 - N-Channel MOSFET (Wing On)
Feb 2009 PFP18N50 / PFF18N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.