F10N65 Datasheet - Pan Jit International

F10N65 - 650V N-Channel Enhancement Mode MOSFET

F10N65 Features

* 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB

* Low ON Resistance

* Fast Switching

* Low Gate Charge

* Fully Characterized Avalanche Voltage and Current

* Specially Desigened for AC Adapter, Battery Charge and SMPS

Datasheet Details

F10N65

Pan Jit International

230.07 KB

650v n-channel enhancement mode mosfet.

F10N65 Distributor

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