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F10N65

650V N-Channel Enhancement Mode MOSFET

F10N65 Features

* 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB

* Low ON Resistance

* Fast Switching

* Low Gate Charge

* Fully Characterized Avalanche Voltage and Current

* Specially Desigened for AC Adapter, Battery Charge and SMPS

F10N65 Datasheet (230.07 KB)

Preview of F10N65 PDF

Datasheet Details

Part number:

F10N65

Manufacturer:

Pan Jit International

File Size:

230.07 KB

Description:

650v n-channel enhancement mode mosfet.

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F10N65 650V N-Channel Enhancement Mode MOSFET Pan Jit International

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