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F10N65 650V N-Channel Enhancement Mode MOSFET

F10N65 Description

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET .

F10N65 Features

* 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB
* Low ON Resistance
* Fast Switching
* Low Gate Charge
* Fully Characterized Avalanche Voltage and Current
* Specially Desigened for AC Adapter, Battery Charge and SMPS

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Datasheet Details

Part number
F10N65
Manufacturer
Pan Jit International
File Size
230.07 KB
Datasheet
F10N65-PanJitInternational.pdf
Description
650V N-Channel Enhancement Mode MOSFET

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650V N-Channel Enhancement Mode MOSFET Pan Jit International
Pan Jit International F10N65-like datasheet