F10N60 10A 600V N-channel Enhancement Mode Power MOSFET

Description

10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 .
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching perf.

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Datasheet Specifications

Part number: F10N60
Manufacturer: ROUM
File Size: 897.66 KB
Datasheet: F10N60-ROUM.pdf
Description: 10A 600V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.9Ω)
* Low Gate Charge(Typical Data:32nC)
* Low Reverse Transfer Capacitances(Typical:7.5pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency.
* Power Switch Circuit of Adaptor and Charger. 2 D VDSS = 600V RDS(on)（TYP)= 0.68Ω 3 S ID = 10A TO-220F 4 Electrical Characteristics 4.1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted) Para

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F10N60 10A 600V N-channel Enhancement Mode Power MOSFET ROUM

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