F10N60 Datasheet - ROUM

F10N60 - 10A 600V N-channel Enhancement Mode Power MOSFET

F10N60 Features

* Fast Switching

* Low ON Resistance(Rdson≤0.9Ω)

* Low Gate Charge(Typical Data:32nC)

* Low Reverse Transfer Capacitances(Typical:7.5pF)

* 100% Single Pulse Avalanche Energy Test

* 100% ΔVDS Test 3 Applications

* Used in Various Power Switching Circuit for System Miniatur

Datasheet Details

F10N60

ROUM

897.66 KB

10a 600v n-channel enhancement mode power mosfet.

F10N60 Distributor

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