F3205Z Datasheet | Specifications & PDF Download

www.DataSheet.co.kr PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resi

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  AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Swi

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PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

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  AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Swi

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PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re

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PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re

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AUF3205ZS-VB AUF3205ZS-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m

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PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re

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Isc N-Channel MOSFET Transistor IRF3205ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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www.DataSheet4U.com PD - 97542 AUTOMOTIVE GRADE Features ● ● ● ● ● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D ● ● Advanced Process Technology

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www.DataSheet4U.com PD - 97542 AUTOMOTIVE GRADE Features ● ● ● ● ● AUIRF3205Z AUIRF3205ZS HEXFET® Power MOSFET D ● ● Advanced Process Technology

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PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

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PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

(29 views)

AUF3205Z-VB AUF3205Z-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205Z，IIRF3205Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.5mΩ ·Enhancement

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