Prosperity Dielectrics Co., Ltd. No.220-1, Sec. 2.
SiHFBF20L - Power MOSFET
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 900 VGS = 10 V 38 Qgs (n.SiHFBF20S - Power MOSFET
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 900 VGS = 10 V 38 Qgs (n.IRFBF20L - Power MOSFET
PD - 9.1665 PRELIMINARY l l l l l l l IRFBF20S/L HEXFET® Power MOSFET D Surface Mount (IRFBF20S) Low-profile through-hole (IRFBF20L) Available in T.IRFBF20S - Power MOSFET
PD - 9.1665 PRELIMINARY l l l l l l l IRFBF20S/L HEXFET® Power MOSFET D Surface Mount (IRFBF20S) Low-profile through-hole (IRFBF20L) Available in T.SiHFBF20 - Power MOSFET
Power MOSFET IRFBF20, SiHFBF20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V .IRFBF20 - Power MOSFET
Power MOSFET IRFBF20, SiHFBF20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V .IRFBF20S - Power MOSFET
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 900 VGS = 10 V 38 Qgs (n.IRFBF20L - Power MOSFET
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 900 VGS = 10 V 38 Qgs (n.FBF20 - High-Power Low Resistance Lead Free & Halogen Free Chip Resistors
Prosperity Dielectrics Co., Ltd. No.220-1, Sec. 2, Nanshan Rd., Lujhu, Taoyuan 33860, Taiwan, R.O.C. Tel.:886-3-3224471 Fax:886-3-3212216 SPECIFICAT.