Description
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 900 VGS = 10 V 38 Qgs (n.
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
Features
* Halogen-free According to IEC 61249-2-21
Definition
* Surface Mount (IRFBF20S, SiHFBF20S)
* Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)
* Available in Tape and Reel (IRFBF20S, SiHFBF20S)
* Dynamic dV/dt Rating
* 150 °C Operating Temperature
Applications
* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L, SiHFBF20L) is available for low-profile applications. ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBF20S-
