SiHFBF20L Power MOSFET

Vishay Siliconix

Description

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 900 VGS = 10 V 38 Qgs (n.
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFBF20L
Manufacturer: Vishay ↗ Siliconix
File Size: 294.53 KB
Datasheet: SiHFBF20L_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Surface Mount (IRFBF20S, SiHFBF20S)
* Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)
* Available in Tape and Reel (IRFBF20S, SiHFBF20S)
* Dynamic dV/dt Rating
* 150 °C Operating Temperature

Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L, SiHFBF20L) is available for low-profile applications. ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBF20S-

SiHFBF20L Distributors

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SiHFBF20L Power MOSFET Vishay Siliconix

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