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SiHFBF30 Power MOSFET

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Description

Power MOSFET IRFBF30, SiHFBF30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V .
Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

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Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBF30PbF SiHFBF30-E3 IRFBF30 SiHFBF30 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S

SiHFBF30 Distributors

📁 Related Datasheet

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SiHFBF30 Power MOSFET Vishay Siliconix
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