FDL Datasheet | Specifications & PDF Download

FDL100N50F N-Channel MOSFET FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features • RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A • Low gate

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BLG20T65FDLA IGBT 1．Description BLG20T65FDLA is obtained by advSatnecepd-Down Converter Trench Field Stop (T-FS) technology which is , charac

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-

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AOTF125A60FDL 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optim

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MOSFET – N-Channel, UniFETtFRFET® 500 V, 100 A, 55 mW FDL100N50F Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stri

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FDLL3595 General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass

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QUALITY MICROELECTRONICS(SHENZHEN)CO.,LTD high quality high requirement high efficiency SPECIFICATION FOR APPROVAL CUSTOMER ： CLIENT TYPE: PRODUCTION

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BLG40T65FDL IGBT 1．Description Step-Down Converter BLG40T65FDL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteri

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FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 — High Conductance Low Leakage Diode March 2015 FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 High C

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FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 — High Conductance Low Leakage Diode March 2015 FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 High C

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1N4150 / FDLL4150 Discrete POWER & Signal Technologies 1N4150 / FDLL4150 COLOR BAND MARKING DEVICE FDLL4150 1ST BAND 2ND BAND BLACK ORANGE LL-34 D

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FDLL485B General Description: A General Purpose diode that couples high forward conductance fast switching speed and high blocking voltages in a glass

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Features Datasheet RX65N Group, RX651 Group Renesas MCUs R01DS0276EJ0230 Rev.2.30 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 2-MB flash

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DATA SHEET www.onsemi.com Small Signal Diode FDLL4150 Features • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (Values are at T

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Small Signal Diode 1N91x, 1N4x48, FDLL914, FDLL4x48 ORDERING INFORMATION Part Number Marking Package 1N914 914 DO−204AH (DO−35) 1N914−T50A 914

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AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description The AOTF10N50FD has been fabricated using an advanced high voltag

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High Voltage General Purpose Diode FDH400, FDLL400 Features • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (Values are at TA =

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BLG50T65FDLA IGBT 1．Description BLG50T65FDLA is obtained by adSvatnecped-Down Converter Trench Field Stop (T-FS) technology which is , charac

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