FDP085N10A Datasheet | Specifications & PDF Download

FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ Features • RDS(on) = 7.35 mΩ (Typ.) @ VGS =

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N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part FDP085N10A V(BR)DSS 100V IDn 96A RDS(on) Max 8.5mΩ1 Die Size 2.4 x 4.4 mm2 See page 2

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FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ November 2013 Features • RDS(on) = 7.35 mΩ

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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