FE-110 Datasheet | Specifications & PDF Download

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA =

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IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard S

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NIKO-SEM N-Channel Enhancement Mode PA110BEA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V

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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage

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Leaded Ferrite Beads - BC Series BC Series Features l Compact l High performance l Easy to install Product Identification Applications These PC Be

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APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and

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Preliminary Data Sheet ADSY1100 4 Tx/4 Rx, 0.1 GHz to 20 GHz Apollo MxFE 3UVPX Tuner + Digitizer + Processor FEATURES ► Four transmit (Tx) channels ►

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PA110BLA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA

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MT1103 Series CMOS, Uni-polar, Hall-Effect Magnetic Position Sensors Features and Benefits CMOS Technology Magnetic Type: Uni-polar Wide Operating Vo

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect tr

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www.DataSheet4U.com PHP/PHB110NQ08LT N-channel TrenchMOS™ logic level FET Rev. 01 — 29 March 2004 Product data 1. Product profile 1.1 Description Log

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PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General d

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www.DataSheet4U.com PHD110NQ03LT N-channel TrenchMOS™ logic level FET Rev. 01 — 16 June 2004 M3D300 Product data 1. Product profile 1.1 Description

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www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(o

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www.DataSheet4U.com PHP/PHB110NQ06LT N-channel TrenchMOS™ logic level FET Rev. 01 — 04 May 2004 Product data 1. Product profile 1.1 Description Logic

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PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 2

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