FE-110 Datasheet | Specifications & PDF Download

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/\ = 25°C Derate above 25°C Junction Temperatu

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InterFET Product Folder Technical Support Order Now J110-A J110, J110A N-Channel JFET Features • InterFET N0450S Geometry • Low Noise: 1 nV/√Hz

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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www.DataSheet4U.com J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed f

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InterFET Product Folder Technical Support Order Now J110-A J110, J110A N-Channel JFET Features • InterFET N0450S Geometry • Low Noise: 1 nV/√Hz

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110A, 30V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3011T uses advanced trench technology and design to provide excellent RDS(pn) with low gat

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www.atcsemi.com Features ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Excellent CdV/dt effect decline ● Green Device Avail

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STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS

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NIKO-SEM N-Channel Enhancement Mode PA110BEA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V

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PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA =

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PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General d

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Bridge Rectifiers KBPC1005 Through KBPC110 KPBC1 FEATURES UL recognition, file #E230084 Suitable for printed circuit board or chassis mounti Compac

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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage

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IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard S

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PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 2

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PA110BLA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA

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