DIGITAL CAMERA FE-110/X-705 FE-100/X-710 Basic Ma.
INCHANGE
IRFP4110 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4110，IIRFP4110 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhancement m.
STMicroelectronics
STP110N7F6 - N-CHANNEL POWER MOSFET
STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD.
Inchange Semiconductor
IRFB4110 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp.
GOFORD
GT110N06 - N-Channel Enhancement Mode Power MOSFET
GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , .
STMicroelectronics
STP110N8F6 - N-CHANNEL POWER MOSFET
STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS.
International Rectifier
IRFB4110 - HEXFET Power MOSFET
IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard S.
GE Solid State
IRFF110 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors
www.DataSheet4U.com .
Sinopower
APM1105NU - N-Channel MOSFET
APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and .
INCHANGE
IRLR3110Z - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche .
Alfa-MOS
AFN2324BA - 110V N-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFN2324BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.
UNIKC
PA110BL - MOSFET
PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA =.
International Rectifier
AUIRFP4110 - Power MOSFET
AUTOMOTIVE GRADE AUIRFP4110 Features Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating.
NCE Power Semiconductor
NCE0110AK - N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technol.
INCHANGE
2SK1105 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-.
GOFORD
G110N06 - MOSFET
GOFORD General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capabili.
Vishay
IRFD110 - Power MOSFET
www.vishay.com IRFD110 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs.
Vishay
SUM110N06-3m4L - N-Channel MOSFET
SUM110N06-3m4L www.DataSheet4U.com Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0034 at VGS = .
NCE Power Semiconductor
NCE0110K - NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technolog.
MagnTek
MT1103 - Hall-Effect Magnetic Position Sensors
MT1103 Series CMOS, Uni-polar, Hall-Effect Magnetic Position Sensors Features and Benefits CMOS Technology Magnetic Type: Uni-polar Wide Operating Vo.
