FE-110 Datasheet | Specifications & PDF Download

IRFB4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard S

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STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS

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SM1110NSA Features · 100V/1.7A , RDS(ON)=200mW(max.) @ VGS=10V RDS(ON)=235mW(max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and Gr

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APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4110AT-Y 100V/

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Si7110DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0053 at VGS = 10 V 0.0078 at VGS = 4

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HGB110N10SL , HGP110N10SL P-1 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedne

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isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

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SM1105NSV Features · 100V/3.5A, RDS(ON)= 105mW(max.) @ VGS= 10V RDS(ON)= 175mW(max.) @ VGS= 4.5V · ESD proteced · Reliable and Rugged · Lead Free and

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PD - 97311 IRFP4110PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l

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APM1110NU/APM1110NUB ® N-Channel Enhancement Mode MOSFET Features • 100V/10A, RDS(ON)= 175mΩ (max.) @ VGS=10V RDS(ON)= 235mΩ (max.) @ VGS=4.5V •

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NB3V110xC Series 3.3V/2.5V/1.8V LVCMOS Low Skew Fanout Buffer Family Description The NB3V110xC are a modular, high−performance, low−skew, general pu

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Preliminary Data Sheet ADSY1100 4 Tx/4 Rx, 0.1 GHz to 20 GHz Apollo MxFE 3UVPX Tuner + Digitizer + Processor FEATURES ► Four transmit (Tx) channels ►

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Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold - 2.0V max. ►► High input impedance ►► Low input capaci

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω ZVN2110A D G S E-Line TO92 Compatible ABSOL

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