Technology FP120 RAIL CURRENT MEASUREMENT IC GEN.
EATON
FP1208 - high current power inductors
Technical Data 10148 Effective June 2017 Supersedes August 2013 FP1208 High frequency, high current power inductors Product features • 12.1x8.0x8.0.
SCILICON
SFP120N80 - N-MOSFET
Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Applic.
Feeling Technology
FP120 - RAIL CURRENT MEASUREMENT IC
Technology FP120 RAIL CURRENT MEASUREMENT IC GENERAL DESCRIPTION The FP120 is a wide input supply and common mode voltage IC for the high side rail .
TRIAD
FP120-50 - Power Transformer
Power Transformer PC Mount: Flat Pack ™ FP120-50 Electrical Specifications (@25C) 1. Maximum Power: 6.0 VA 2. Primary Voltage: Series: 230V@50/60 Hz .
Rohm
UQFP120 - LSI Assembly
LSI Assembly UQFP120 (Units : mm) • UQFP120 www.DataSheet4U.com 16.0 14.0 90 91 61 60 16.0 14.0 120 31 1 30 1.2 H=1.6Max. The contents descr.
SCILICON
SFP120N100 - N-MOSFET
SFPS(BFP)1(B2)01N2100N0100B SGT N-MOSFET100V, 120A, 4.0mΩ Features Uses advanced SGT MOSFET technology Extremely low on-resistance RDS(on) High.
SCILICON
SFP120N120 - N-MOSFET
Features Adanced trench process technonlog Extremely low on-resistance RDS(on) High Ruggedness 100% Avalance Tested Application Power Manage.
SCILICON
SFP120N85 - N-MOSFET
Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Applic.
JILIN SINO
FP120F60ADNS1 - FAST RECOVERY DIODE MODULE
FAST RECOVERY DIODE R FP120F60ADNS1 MAIN CHARACTERISTICS IF(AV) VRRM VF(typ) trr（typ） 60*2 A 600 V 1.8 V 48ns Package SOT-227 UPS PFC .
SCILICON
SFP120N80B - N-MOSFET
SFP(B)120N80B N-MOSFET 80V, 120A, 5.5mΩ Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and.