FQP13N10 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistanc

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FQP13N10 January 2001 QFET FQP13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQP13N10L — N-Channel QFET® MOSFET FQP13N10L N-Channel QFET® MOSFET 100 V, 12.8 A, 180 mΩ December 2013 Description This N-Channel enhancement mode

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isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for r

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