FQP50N06 Datasheet | Specifications & PDF Download

FQP50N06 ® FQP50N06 Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :

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FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is p

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FQP50N06 QFET FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fa

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FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is p

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :

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