FZT649 Datasheet | Specifications & PDF Download

FZT649 Discrete Power & Signal Technologies July 1998 FZT649 C E B C SOT-223 NPN Low Saturation Transistor These devices are designed with high

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Features • BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 300mV @ 1A • Complementary

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