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Frequencies Datasheet, Features, Application

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Siemens Semiconductor Group
rating-1 10

BAR63-05 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 10

BAR63-05W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 9

Q62702-A1025 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 8

CLY10 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

Siemens Semiconductor Group
rating-1 8

CLY2 - GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 8

Q62702-A1004 - Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

Siemens Semiconductor Group
rating-1 8

Q62702-A786 - Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)

Siemens Semiconductor Group
rating-1 7

BAR63-03 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 7

BAR63-03W - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 7

BAR63-06W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 7

Q62702-A1028 - Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

Siemens Semiconductor Group
rating-1 6

BAR63 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 6

BAR63-06 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 6

BAR63-W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 6

Q62702-A1037 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 6

Q62702-A1198 - Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

Siemens Semiconductor Group
rating-1 6

Q62702-A1267 - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 6

Q62702-A1268 - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Siemens Semiconductor Group
rating-1 5

CLY15 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

Siemens Semiconductor Group
rating-1 5

BAR61 - Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)

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