G20N50C Datasheet | Specifications & PDF Download

www.vishay.com SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg m

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HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SI

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www.vishay.com SiHG20N50C Vishay Siliconix Power MOSFET D TO-247 S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg m

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isc N-Channel MOSFET Transistor SIHG20N50C FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-

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