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G4PH40UD2-E Datasheet, Features, Application

G4PH40UD2-E IRG4PH40UD2-E

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE.

IRF
rating-1 7

IRG4PH40UD2-E - Insulated Gate Bipolar Transistor

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • Ultr.
International Rectifier
rating-1 5

G4PH40UD2-E - IRG4PH40UD2-E

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • Ultr.
IRF
rating-1 3

IRG4PH40UD2 - Insulated Gate Bipolar Transistor

PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating freque.
IRF
rating-1 2

IRG4PH40UD2PBF - Insulated Gate Bipolar Transistor

PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating fre.
IRF
rating-1 2

IRG4PH40UD2-EP - Insulated Gate Bipolar Transistor

PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM u.
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