GP15 Datasheet | Specifications & PDF Download

150V, 200A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGP154R0Tuses advanced SGT technology and design to provide excellent RDS(on) with low gate

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150V, 100A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGP157R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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Not for New Designs RGP15A, RGP15B, RGP15D, RGP15G, RGP15J, RGP15K, RGP15M www.vishay.com Vishay General Semiconductor Glass Passivated Junction F

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IGBT Lightspeed Series IXGA 15N100C IXGP 15N100C VCES IC25 VCE(sat) tfi(typ) =1000 V = 30 A = 3.5 V = 115 ns Symbol VCES VCGR VGES VGEM IC25 IC90

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Not for New Designs RGP15A, RGP15B, RGP15D, RGP15G, RGP15J, RGP15K, RGP15M www.vishay.com Vishay General Semiconductor Glass Passivated Junction F

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) feat

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IGBT Lightspeed Series IXGA 15N100C IXGP 15N100C VCES IC25 VCE(sat) tfi(typ) =1000 V = 30 A = 3.5 V = 115 ns Symbol www.DataSheet4U.com V CES Tes

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GP15A - GP15M AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.5 A Features Diffused Junction Low Forward Voltage Drop

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Not for New Designs GP15A, GP15B, GP15D, GP15G, GP15J, GP15K, GP15M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic

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600V, 15A, Trench FS II IGBT General Description: Using WOS's proprietary trench design and advanced FS (field stop) second generation technology, the

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CGP15 and DGP15 New Product Vishay Semiconductors formerly General Semiconductor Miniature Clamper/Damper Glass Passivated Rectifier DO-204AC (DO-15

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RGP15A THRU RGP15M FAST SWITCHING RECTIFIERS GLASS PASSIVATED JUNCTION Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Amperes Features • Hig

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FGP15N60UNDF 600 V, 15 A Short Circuit Rated IGBT FGP15N60UNDF 600 V, 15 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Curren

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MGP15N35CL, MGB15N35CL Preferred Device Ignition IGBT 15 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transist

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GP15A - GP15M SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.5 Amperes D2 FEATURES : * High current capability * High surge current capabil

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) feat

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HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ)

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GP15A - GP15M SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.5 Amperes D2 FEATURES : * High current capability * High surge current capabil

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RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified

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Silan Microelectronics SVGP157R2NS_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R2NS is an N-channel enhancement mode power MOS field e

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