SVGP159R3NL5A Datasheet | Silan Microelectronics

Silan Microelectronics SVGP159R3NL5A(L5)_Datasheet 87A, 150V N-CHANNEL MOSFET DESCRIPTION S1 SVGP159R3NL5A(L5) is an N-channel enhancement mode power S2 MOS field effect transistor which is produced using Silan's LVMOS S3 technology. The improved process and cell structure have been G4 especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 8D 7D 6D 5D Features - 87A, 150V, RDS(on)(typ.)=7.9m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant PDFN-8-5X6X0.95-1.27 DFN-8-5×6×0.9-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 150 3.0~4.6 9.3 87 40 Unit V V m A n...