SVGP159R3NL5A Overview
S1 SVGP159R3NL5A(L5) is an N-channel enhancement mode power S2 MOS field effect transistor which is produced using Silan's LVMOS S3 technology. The improved process and cell structure have been G4 especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.
SVGP159R3NL5A Key Features
- 87A, 150V, RDS(on)(typ.)=7.9m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant