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SVGP159R3NL5A - 150V N-CHANNEL MOSFET

General Description

technology.

switching performance.

Key Features

  • 87A, 150V, RDS(on)(typ. )=7.9m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant PDFN-8-5X6X0.95-1.27 DFN-8-5×6×0.9-1.27 KEY.

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Datasheet Details

Part number SVGP159R3NL5A
Manufacturer Silan Microelectronics
File Size 427.38 KB
Description 150V N-CHANNEL MOSFET
Datasheet download datasheet SVGP159R3NL5A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVGP159R3NL5A(L5)_Datasheet 87A, 150V N-CHANNEL MOSFET DESCRIPTION S1 SVGP159R3NL5A(L5) is an N-channel enhancement mode power S2 MOS field effect transistor which is produced using Silan's LVMOS S3 technology. The improved process and cell structure have been G4 especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 8D 7D 6D 5D FEATURES  87A, 150V, RDS(on)(typ.)=7.9m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant PDFN-8-5X6X0.95-1.27 DFN-8-5×6×0.9-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ.