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SVGP157R5NP7 - 150V N-CHANNEL MOSFET

Download the SVGP157R5NP7 datasheet PDF. This datasheet also covers the SVGP157R5NT variant, as both devices belong to the same 150v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVGP157R5NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 100A, 150V, RDS(on)(typ. )=6.2m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 123 TO-220-3L 3 12 3 TO-247-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVGP157R5NT-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVGP157R5NP7
Manufacturer Silan Microelectronics
File Size 406.80 KB
Description 150V N-CHANNEL MOSFET
Datasheet download datasheet SVGP157R5NP7 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVGP157R5NT 150V N-CHANNEL MOSFET
SVGP157R2NS 150V N-CHANNEL MOSFET
SVGP15140NL5A 150V N-CHANNEL MOSFET
SVGP159R3NL5A 150V N-CHANNEL MOSFET
SVGP101R5NL 100V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVGP157R5NT(P7)_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R5NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  100A, 150V, RDS(on)(typ.)=6.2m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 123 TO-220-3L 3 12 3 TO-247-3L FEATURES Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 150 2.0~4.0 7.