SVGP157R2NS Description
SVGP157R2NS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS and Power Management for Inverter Systems.
SVGP157R2NS Key Features
- 100A, 150V, RDS(on)(typ.)=6.2m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability