SVGP157R2NS - 150V N-CHANNEL MOSFET

Silan Microelectronics

General Description

SVGP157R2NS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

100A, 150V, RDS(on)(typ. )=6.2m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability 1 3 TO-263-2L.

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SVGP157R2NS 150v n-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVGP157R2NS
Manufacturer	Silan Microelectronics
File Size	281.26 KB
Description	150V N-CHANNEL MOSFET
Datasheet	SVGP157R2NS Datasheet

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Silan Microelectronics SVGP157R2NS_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R2NS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS and Power Management for Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  100A, 150V, RDS(on)(typ.)=6.2m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 3 TO-263-2L ORDERING INFORMATION Part No.