SVGP157R2NS Datasheet | Silan Microelectronics

Silan Microelectronics SVGP157R2NS_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R2NS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS and Power Management for Inverter Systems. 1 3 1.Gate 2.Drain 3.Source Features - 100A, 150V, RDS(on)(typ.)=6.2m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability TO-263-2L ORDERING INFORMATION Part No. SVGP157R2NSTR Package TO-263-2L Marking P157R2NS Hazardous Substance Control Halogen free Packing Type...