SVGP157R5NT Datasheet | Silan Microelectronics

Silan Microelectronics SVGP157R5NT(P7)_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R5NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 1 3 1.Gate 2.Drain 3.Source Features - 100A, 150V, RDS(on)(typ.)=6.2m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant TO-220-3L 12 3 TO-247-3L Features Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 150 2.0~4.0 7.5 100 74 Unit V V m A n C ORDERING INFORMATION Part No. SVGP157R5NT SVGP157R5NP7 Package...