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GR210 2A Leaded Type General Purpose Rectifiers

GR2005 THRU GR210 2A Leaded Type General Purpose R.

Agere Systems

AGR21010E - N-Channel E-Mode Lateral MOSFET

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Rating: 1 (2 votes)
TriQuint Semiconductor

AGR21045EF - Transistor

Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, late.
Rating: 1 (2 votes)
TriQuint Semiconductor

AGR21060E - Transistor

AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, .
Rating: 1 (2 votes)
TriQuint Semiconductor

AGR21090E - Transistor

AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally diffused.
Rating: 1 (2 votes)
CITC

GR210 - 2A Leaded Type General Purpose Rectifiers

GR2005 THRU GR210 2A Leaded Type General Purpose Rectifiers ■ Features • Axial lead type devices for through hole design. • High current capability. .
Rating: 1 (1 votes)
TriQuint Semiconductor

AGR21030EF - Transistor

AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffus.
Rating: 1 (1 votes)
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