AGR21060E - Transistor
AGR21060E 60 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
) Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21060EU AGR21060EF Sym Rı JC Rı JC
AGR21060E Features
* Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at F1
* 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1
* 10 MHz and www.DataSheet4U.com F2 +
