AGR21060E Datasheet - TriQuint Semiconductor

AGR21060E Transistor

AGR21060E 60 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. ) Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21060EU AGR21060EF Sym Rı JC Rı JC .

AGR21060E Features

* Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at F1

* 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1

* 10 MHz and www.DataSheet4U.com F2 +

AGR21060E_TriQuintSemiconductor.pdf