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AGR21060E Transistor

AGR21060E Description

AGR21060E 60 W, 2.110 GHz *2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21060E is a high-voltage, gold-metalized, enhancemen.

AGR21060E Features

* Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at F1
* 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1
* 10 MHz and www. DataSheet4U. com F2 +

AGR21060E Applications

* ) Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21060EU AGR21060EF Sym Rı JC Rı JC Value 1.0 1.0 Unit °C/W °C/W Table 2. Absolute Maximum Ratings
* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21060EU AGR21060EF De

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