AGR21125E Datasheet - TriQuint Semiconductor

AGR21125E Transistor

AGR21125E 125 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. 7 Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21125EU AGR21125EF Sym Rı JC Rı JC.

AGR21125E Features

* Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1

* 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1

* 10 MHz and www.DataSheet4U.com F2 + 10 MHz. Typi

AGR21125E_TriQuintSemiconductor.pdf