AGR26045EF Datasheet - TriQuint Semiconductor

AGR26045EF Transistor

AGR26045EF 45 W, 2.535 GHz 2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W Tabl.

AGR26045EF Features

* Typical performance for MMDS systems. f = 2600 MHz, IDQ = 430 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF

* :

* Output power: 6.5 W.

* Power gain: 13 dB.

AGR26045EF Datasheet (408.88 KB)