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AGR26180EF Transistor

AGR26180EF Description

Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz *2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high.

AGR26180EF Features

* Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF
* :
* Output power: 27 W. www. DataSheet4U. com
* Power

AGR26180EF Applications

* including multichannel multipoint distribution service (MMDS) for broadcasting and communications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W Table 2. Absolute Maximum Ratings
* Parameter Drain-source Voltage Gate-source Voltag

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