Datasheet Details
Part number:
AGR26180EF
Manufacturer:
TriQuint Semiconductor
File Size:
391.69 KB
Description:
Transistor.
AGR26180EF_TriQuintSemiconductor.pdf
Datasheet Details
Part number:
AGR26180EF
Manufacturer:
TriQuint Semiconductor
File Size:
391.69 KB
Description:
Transistor.
AGR26180EF, Transistor
Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz 2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications.
Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case S
AGR26180EF Features
* Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF
* :
* Output power: 27 W. www.DataSheet4U.com
* Power
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