AGR26180EF Datasheet - TriQuint Semiconductor

AGR26180EF Transistor

Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz 2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case S.

AGR26180EF Features

* Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF

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* Output power: 27 W. www.DataSheet4U.com

* Power

AGR26180EF Datasheet (391.69 KB)