Datasheet Details
Part number:
AGR26125E
Manufacturer:
TriQuint Semiconductor
File Size:
399.77 KB
Description:
Transistor.
AGR26125E_TriQuintSemiconductor.pdf
Datasheet Details
Part number:
AGR26125E
Manufacturer:
TriQuint Semiconductor
File Size:
399.77 KB
Description:
Transistor.
AGR26125E, Transistor
AGR26125E 125 W, 2.5 GHz 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and communications.
) Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR26125EU AGR26125EF Sym Rı JC Rı JC
AGR26125E Features
* Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W. Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF
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