AGR26125E Datasheet - TriQuint Semiconductor

AGR26125E Transistor

AGR26125E 125 W, 2.5 GHz 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and communications. ) Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR26125EU AGR26125EF Sym Rı JC Rı JC.

AGR26125E Features

* Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W. Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF

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AGR26125E Datasheet (399.77 KB)