AGR21030EF Datasheet - TriQuint Semiconductor

AGR21030EF Transistor

AGR21030EF 30 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 2.0 Unit °C/W Table 2. Absolute Maximum R.

AGR21030EF Features

* Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1

* 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1

* 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 d

AGR21030EF_TriQuintSemiconductor.pdf