AGR21090E Datasheet - TriQuint Semiconductor

AGR21090E Transistor

AGR21090E 90 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Rı JC Rı JC Value 0.7 0.7 Un.

AGR21090E Features

* Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1

* 5 MHz and F2 + 5 MHz. Third-order distortion is measured www.DataSheet4U.com over 3.84 MHz BW at F1

* 10 MHz and F2 + 10 MHz. Typica

AGR21090E_TriQuintSemiconductor.pdf