AGR21090E Transistor

TriQuint Semiconductor

Description

AGR21090E 90 W, 2.110 GHz *2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally .

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Datasheet Specifications

Part number: AGR21090E
Manufacturer: TriQuint Semiconductor
File Size: 434.99 KB
Datasheet: AGR21090E_TriQuintSemiconductor.pdf
Description: Transistor

Features

* Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1
* 5 MHz and F2 + 5 MHz. Third-order distortion is measured www. DataSheet4U. com over 3.84 MHz BW at F1
* 10 MHz and F2 + 10 MHz. Typica

Applications

* Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Rı JC Rı JC Value 0.7 0.7 Unit °C/W °C/W Table 2. Absolute Maximum Ratings
* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21090EU AGR21090EF Derat

AGR21090E Distributors

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AGR21090E Transistor TriQuint Semiconductor

TriQuint Semiconductor AGR21090E-like datasheet