Features • 650 V enhancement mode power transist.
GaN Systems
GS-065-011-6-LR - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ •.
GaN Systems
GS-065-011-2-L - 650V E-mode GaN transistor
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .
GaN Systems
GS-065-011-6-L - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 12.
GaN Systems
GS-065-011-1-L - 650V E-mode GaN transistor
GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B.