GeneSic Datasheet | Specifications & PDF Download

Single Phase Glass Passivated Silicon Bridge Rectifier Features • Low forward voltage • High surge overload rating • Ideal for printed circuit boards

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Single Phase Glass Passivated Silicon Bridge Rectifier Features • Low forward voltage • High surge overload rating • Ideal for printed circuit boards

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G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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Single Phase Glass Passivated Silicon Bridge Rectifier Features • Low forward voltage • High surge overload rating • Ideal for printed circuit boards

(14 views)

Single Phase Glass Passivated Silicon Bridge Rectifier Features • Low forward voltage • High surge overload rating • Ideal for printed circuit boards

(14 views)

Single Phase Silicon Bridge Rectifier W005M thru W04M VRRM = 50 V - 400 V IO = 1.5 A Features • Ideal for printed circuit board • Low forward voltag

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Single Phase Silicon Bridge Rectifier W005M thru W04M VRRM = 50 V - 400 V IO = 1.5 A Features • Ideal for printed circuit board • Low forward voltag

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 2

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Single Phase Silicon Bridge Rectifier W005M thru W04M VRRM = 50 V - 400 V IO = 1.5 A Features • Ideal for printed circuit board • Low forward voltag

(7 views)

IGBT/SiC Diode Co-pack Features •Optimal Punch Through (OPT) technology •SiC freewheeling diode • Positive temperature coefficient for easy parallel

(7 views)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu

(7 views)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM

(7 views)

G3R20MT17K 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

(7 views)

G2R120MT33-CAL 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G2R™ Technology with +20 V Gate Drive • Superior

(7 views)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 2

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Single Phase Silicon Bridge Rectifier Features • High efficiency • Silicon junction • Metal case • Types from 50 V to 400 V VRRM • Not ESD Sensitive M

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud

(6 views)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu

(6 views)