.
GeneSiC
GA35XCP12-247 - IGBT/SiC Diode Co-pack
IGBT/SiC Diode Co-pack Features •Optimal Punch Through (OPT) technology •SiC freewheeling diode • Positive temperature coefficient for easy parallel.
GeneSiC
S300Z - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode S300Y thru S300ZR VRRM = 1600 V - 2000 V IF =300 A Features • High Surge Capability • Types from 1600 V to 2000 V VR.
GeneSiC
KBL608G - Silicon Bridge Rectifier
Single Phase Glass Passivated Silicon Bridge Rectifier Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded pl.
GeneSiC
GA03JT12-247 - Junction Transistor
Normally – OFF Silicon Carbide Junction Transistor Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe O.
GeneSiC
GA040TH65 - Silicon Carbide Thyristor
Silicon Carbide Thyristor Features • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT.
GeneSiC
MURTA200120R - Silicon Super Fast Recovery Diode
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated .
GeneSiC
KBJ4005G - Single Phase Glass Passivated Silicon Bridge Rectifier
Single Phase Glass Passivated Silicon Bridge Rectifier Features • Ideal for printed circuit board • Reliable low cost construction • Plastic material .
GeneSiC
DB102G - Single Phase Glass Passivated Silicon Bridge Rectifier
Single Phase Glass Passivated Silicon Bridge Rectifier DB101G thru DB104G VRRM = 50 V - 400 V IO = 1 A Features • Ideal for printed circuit board • .
GeneSiC
GB01SLT12-214 - Silicon Carbide Schottky Diode
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av.
GeneSiC
FR30J02 - Silicon Fast Recovery Diode
Silicon Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is c.
GeneSiC
FR30AR02 - Silicon Fast Recovery Diode
Silicon Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is c.
GeneSiC
FR30JR02 - Silicon Fast Recovery Diode
Silicon Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is c.
GeneSiC
S150J - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu.
GeneSiC
S150Q - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu.
GeneSiC
S150QR - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu.
GeneSiC
1N1183AR - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cath.
GeneSiC
GD05MPS17H - Silicon Carbide Schottky Diode
GD05MPS17H 1700V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Avalan.
GeneSiC
1N3671AR - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu.
GeneSiC
FST10040 - Silicon Power Schottky Diode
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Isolated to Plate • Not ESD Sensitive FST10020 thru FST.
GeneSiC
GA50JT17-CAL - Junction Transistor
Die Datasheet GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor Features 210 °C Maximum Operating Temperature Gate Oxide Free SiC .