HA-5002 Datasheet | Specifications & PDF Download

P5002CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 50mΩ @VGS = 4.5V ID 4A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25

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Features Precision Reference Voltage: 5.0V (±1%) Low start-up current: typ. 50uA High current totem pole output: typ. 700mA Internal temperature compe

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers

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P5002CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 50mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25

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® RT5002C 7 + 1 Channel DC/DC PMU with Li-Ion Battery Charger for DSC General Description The RT5002C is a complete power supply solution for digita

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INTEGRATED CIRCUITS DATA SHEET PCD5002A Enhanced Pager Decoder for APOC1/POCSAG Product specification File under Integrated Circuits, IC17 1999 Jan 0

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers

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isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain ·Wide Area of Safe Operation ·Complement to the NPN MJ15001 ·100% avalanche tested

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HA-5002 Data Sheet November 1998 File Number 2921.4 110MHz, High Slew Rate, High Output Current Buffer The HA-5002 is a monolithic, wideband, high sl

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HA-5002 Data Sheet November 1998 File Number 2921.4 110MHz, High Slew Rate, High Output Current Buffer The HA-5002 is a monolithic, wideband, high sl

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers

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HA-5002 Data Sheet November 1998 File Number 2921.4 110MHz, High Slew Rate, High Output Current Buffer The HA-5002 is a monolithic, wideband, high sl

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers

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CRMT5002E1 () 500V 4A 3-phase Integrated Power Modules Description CRMT5002E1 is 3-phase Integrated Power Modules (IPM) designed for advanced appl

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HA-5002 Data Sheet November 1998 File Number 2921.4 110MHz, High Slew Rate, High Output Current Buffer The HA-5002 is a monolithic, wideband, high sl

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BR50005L THRU BR5010L o SINGLE PHASE 50 AMP BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500amperes peak ● Low forward voltage drop ● Mounting

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5002 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switch

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5002 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·

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DC COMPONENTS CO., LTD. R RFDTJGJFR SQFDJBMJSTS LCQD NC :555:W :55:W TIRU LCQD NC :565W :565W TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJE

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