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7909 - Three Terminal Negative Voltage Regulator
INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator 7909 FEATURES ·Output current in excess of 1.0A ·Output voltage of -9V ·Intern.BF909WR - N-channel dual-gate MOS-FET
DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semico.PF7909 - Single-Channel WLED Backlight Driver
PF7909 Single-Channel WLED Backlight Driver Preliminary Specification P2 FEATURES Wide Input Range: 9V to 30V Current Mode Control 300mV Curre.GSM3909VP - P-Channel MOSFET
GSM3909VP 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..2N6909 - N-Channel JFET
2N6908 SERIES N-Channel JFET Circuits The 2N690B Series is much more than a JFET. The addition of back-to-back diodes effectively clamps input over-v.CPC3909 - N-Channel MOSFET
INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Ratin.MRF5S19090LSR3 - N-CHANNEL RF POWER MOSFETs
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D MRF5S19090LR3 and MRF5S19090LSR3 replaced.PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.2N5909 - dual n-channel JFET
matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Ga.UC3909 - Switchmode Lead-Acid Battery Charger
UC2909 - Obsolete Device UC2909 UC3909 Switchmode Lead-Acid Battery Charger FEATURES • Accurate and Efficient Control of Battery Charging • Average.CPC3909CTR - N-Channel MOSFET
INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Ratin.MIX2909 - 5W Single-channel Boost Anti-breaking Sound Class-F Power Amplifier
MIX2909 5W F MIX2909、 F。 MIX2909RF 。 ,。 PWM 、PCB,。 , MIX2909 。 MIX2909,。 。POP ,。 MIX2909ESOP8 D: -5W (PVDD=6.5V, RL =4 Ω,THD+N=10%) -5.8W (P.BF909R - N-channel dual gate MOS-FET
NXP Semiconductors N-channel dual gate MOS-FETs Product specification BF909; BF909R FEATURES • Specially designed for use at 5 V supply voltage • Hig.2N5909 - N-Channel Monolithic Dual JFET
o0) Process 84 z10 CM oCO 0) z10 CM o 0) z10 CM O(D 0) lO z CM oIO 0) zlO CM o•8909 - 3-PHASE BRUSHLESS DC MOTOR CONTROLLER/DRIVER WITH BACK-EMF SENSING AND POWER DMOS OUTPUTS
8909 ADVANCE INFORMATION DATA SHEET 3-PHASE BRUSHLESS DC MOTOR (Subject to change without notice) CONTROLLER/DRIVER WITH BACK-EMF SENSING April 3, 19.A8909CLB - 3-PHASE BRUSHLESS DC MOTOR CONTROLLER/DRIVER
8909 ADVANCE INFORMATION DATA SHEET 3-PHASE BRUSHLESS DC MOTOR (Subject to change without notice) CONTROLLER/DRIVER WITH BACK-EMF SENSING April 3, 19.SST6909 - N-Channel JFET
SST6908 SERIES N-Channel JFET Circuits ~SilicDnix ~ incorporated The SST6908 Series is much more than a JFET. The addition of back-to-back diodes ef.