HA-909 Datasheet | Specifications & PDF Download

MODEL NUMBER CPS49093 Phase Shifter, 4 Section FEATURES • 1215-1400 MHz • 22.5° LSB • 337.5° • +42 dBm 3rd Order Intercept • TTL Driver • SMA Conne

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PF7909 Single-Channel WLED Backlight Driver Preliminary Specification P2 FEATURES  Wide Input Range: 9V to 30V  Current Mode Control  300mV Curre

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8909 ADVANCE INFORMATION DATA SHEET 3-PHASE BRUSHLESS DC MOTOR (Subject to change without notice) CONTROLLER/DRIVER WITH BACK-EMF SENSING April 3, 19

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GSM3909VP 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semico

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INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator 7909 FEATURES ·Output current in excess of 1.0A ·Output voltage of -9V ·Intern

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8909 ADVANCE INFORMATION DATA SHEET 3-PHASE BRUSHLESS DC MOTOR (Subject to change without notice) CONTROLLER/DRIVER WITH BACK-EMF SENSING April 3, 19

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SST6908 SERIES N-Channel JFET Circuits ~SilicDnix ~ incorporated The SST6908 Series is much more than a JFET. The addition of back-to-back diodes ef

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2N6908 SERIES N-Channel JFET Circuits The 2N690B Series is much more than a JFET. The addition of back-to-back diodes effectively clamps input over-v

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30V P-Channel MOSFETs PDB3909L General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Ordering number:ENN6312 N-Channel Silicon MOSFET 2SK2909 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swit

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40V P-Channel MOSFETs PDD4909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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60V P-Channel MOSFETs PDD6909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs PDQ3909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs PDN3909S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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