HA-909 Datasheet | Specifications & PDF Download

DA9092 High-Performance Multi-Phase DC-DC Buck Converter General Description DA9092 is a high-performance Power Management IC suitable for supplying

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PF7909 Single-Channel WLED Backlight Driver Preliminary Specification P2 FEATURES  Wide Input Range: 9V to 30V  Current Mode Control  300mV Curre

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60V P-Channel MOSFETs PDD6909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs PDB3909L General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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40V P-Channel MOSFETs PDD4909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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40V P-Channel MOSFETs PDS4909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Mi

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30V P-Channel MOSFETs PDQ3909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Preliminary Datasheet 60V P-Channel MOSFETs PDL6909 General Description These P-Channel enhancement mode power field effect transistors are using t

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MIX2909 5W F MIX2909、 F。 MIX2909RF 。 ，。 PWM 、PCB,。 ， MIX2909 。 MIX2909，。 。POP ，。 MIX2909ESOP8  D： －5W (PVDD=6.5V, RL =4 Ω，THD+N=10%) －5.8W (P

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DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semico

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD909 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current

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LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5909 is a high-performance monolithic dual JFET featuring tight matching and low drif

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30V P-Channel MOSFETs PDN3909S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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NTE2909 MOSFET N−Channel, Enhancement Mode High Speed Switch Description: The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advance

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NXP Semiconductors N-channel dual gate MOS-FETs Product specification BF909; BF909R FEATURES • Specially designed for use at 5 V supply voltage • Hig

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Si7909DN New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.037 @ VGS = –4.5 V –12 0.048 @ VGS = –

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19090L/D MRF5S19090LR3 and MRF5S19090LSR3 replaced

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LTC6909 1 to 8 Output, Multiphase Silicon Oscillator with Spread Spectrum Modulation Features Description n 1-, 2-, 3-, 4-, 5-, 6-, 7- or 8-Phase

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