BF909WR Datasheet - NXP

BF909WR N-channel dual-gate MOS-FET

s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS * VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional communications equipment. 3 4 DESCRIPTION Enhancement type field-effect transistor in a plastic microminiatu.

BF909WR Features

* Specially designed for use at 5 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. PINNING PIN 1 2 3 4 SYMBOL DESCRIPTI

BF909WR Datasheet (180.38 KB)