BF909WR N-channel dual-gate MOS-FET

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semico.
s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS. VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such.

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Datasheet Specifications

Part number: BF909WR
Manufacturer: NXP ↗
File Size: 180.38 KB
Datasheet: BF909WR_PhilipsSemiconductors.pdf
Description: N-channel dual-gate MOS-FET

Features

* Specially designed for use at 5 V supply voltage
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz
* Superior cross-modulation performance during AGC. PINNING PIN 1 2 3 4 SYMBOL DESCRIPTI

BF909WR Distributors

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BF909WR N-channel dual-gate MOS-FET NXP

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