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BF909WR - N-channel dual-gate MOS-FET

General Description

s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS

communications equipment.

Key Features

  • Specially designed for use at 5 V supply voltage.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC.

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DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semiconductors N-channel dual-gate MOS-FET Product specification BF909WR FEATURES  Specially designed for use at 5 V supply voltage  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz  Superior cross-modulation performance during AGC. PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS  VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional communications equipment.