BF909WR - N-channel dual-gate MOS-FET

NXP

BF909WR Datasheet Preview — Preview of BF909WR PDF

Datasheet Details

Part number	BF909WR
Manufacturer	NXP ↗
File Size	180.38 KB
Description	N-channel dual-gate MOS-FET
Datasheet	BF909WR_PhilipsSemiconductors.pdf

BF909WR Product details

Description

s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional communications equipment.3 4 DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package.The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.CAUTIO

Features

Specially designed for use at 5 V supply voltage.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

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Published: Mar 23, 2005 |