PDB3909L Datasheet - Potens semiconductor

PDB3909L P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB3909L Features

* -30V,-6.1A, RDS(ON) =30mΩ@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol

PDB3909L-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDB3909L

Manufacturer:

Potens semiconductor

File Size:

732.81 KB

Description:

P-channel mosfet.

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PDB3909L PDB3909L P-Channel MOSFET Potens semiconductor

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