PDB3814S Datasheet (Potens semiconductor)

PDB3814S, Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDB3814S Features

* 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications ˙ S1 G1 D2 D1 G2 S2 D1 D2

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR G1 G2 S1 S2 Absolute Maximum Ratings Tc=25℃