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PDB3814S Dual N-Channel MOSFET

PDB3814S Description

Preliminary datasheet 30V Dual N-Channel MOSFETs PDB3814S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDB3814S Features

* 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDB3814S
Manufacturer
Potens semiconductor
File Size
544.60 KB
Datasheet
PDB3814S-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET Potens semiconductor
Potens semiconductor PDB3814S-like datasheet