PDB3814S Datasheet - Potens semiconductor

PDB3814S Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB3814S Features

* 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications ˙ S1 G1 D2 D1 G2 S2 D1 D2

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR G1 G2 S1 S2 Absolute Maximum Ratings Tc=25℃

PDB3814S-Potenssemiconductor.pdf

PDB3814S Datasheet Preview — Preview of PDB3814S PDF

Datasheet Details

Part number:

PDB3814S

Manufacturer:

Potens semiconductor

File Size:

544.60 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

PDB3810H N-Channel MOSFET (Potens semiconductor)

PDB3907Z P-Channel MOSFET (Potens semiconductor)

PDB3909L P-Channel MOSFET (Potens semiconductor)

PDB3910L N-Channel MOSFET (Potens semiconductor)

PDB3911L P-Channel MOSFETs (Potens semiconductor)

PDB3912L N-Channel MOSFET (Potens semiconductor)

PDB-C107 Blue Enhanced Photoconductive Silicon Photodiode (Advanced Photonix)

PDB-C109 Blue Enhanced Photoconductive Silicon Photodiode (Advanced Photonix)

TAGS

PDB3814S PDB3814S Dual N-Channel MOSFET Potens semiconductor

PDB3814S Distributor