Part number:
PDB3814S
Manufacturer:
Potens semiconductor
File Size:
544.60 KB
Description:
Dual n-channel mosfet.
PDB3814S-Potenssemiconductor.pdf
Datasheet Details
Part number:
PDB3814S
Manufacturer:
Potens semiconductor
File Size:
544.60 KB
Description:
Dual n-channel mosfet.
PDB3814S, Dual N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDB3814S Features
* 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications ˙ S1 G1 D2 D1 G2 S2 D1 D2
* MB / VGA / Vcore
* POL Applications
* SMPS 2nd SR G1 G2 S1 S2 Absolute Maximum Ratings Tc=25℃
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