Part number:
PDB3810H
Manufacturer:
Potens semiconductor
File Size:
829.33 KB
Description:
N-channel mosfet.
PDB3810H-Potenssemiconductor.pdf
Datasheet Details
Part number:
PDB3810H
Manufacturer:
Potens semiconductor
File Size:
829.33 KB
Description:
N-channel mosfet.
PDB3810H, N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDB3810H Features
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed D2
* Halogen free Applications
* MB / VGA / Vcore
* POL Buck Applications
* SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain
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