PDB3810H Datasheet - Potens semiconductor

PDB3810H N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB3810H Features

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed D2

* Halogen free Applications

* MB / VGA / Vcore

* POL Buck Applications

* SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain

PDB3810H-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDB3810H

Manufacturer:

Potens semiconductor

File Size:

829.33 KB

Description:

N-channel mosfet.

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PDB3810H PDB3810H N-Channel MOSFET Potens semiconductor

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