PDB3810H Datasheet (Potens semiconductor)

PDB3810H, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDB3810H Features

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed D2

* Halogen free Applications

* MB / VGA / Vcore

* POL Buck Applications

* SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain