PDB3911L Datasheet - Potens semiconductor

PDB3911L P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB3911L Features

* -30V,-4.7A, RDS(ON) =55mΩ@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments DDG GD D S Absolute Maximum Ratings Tc=25℃ unless otherwise

PDB3911L-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDB3911L

Manufacturer:

Potens semiconductor

File Size:

799.80 KB

Description:

P-channel mosfets.

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PDB3911L PDB3911L P-Channel MOSFETs Potens semiconductor

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