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PDB3912L N-Channel MOSFET

PDB3912L Description

Preliminary datasheet 30V N-Channel MOSFETs PDB3912L General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDB3912L Features

* 30V,7.8A, RDS(ON) =20mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDB3912L
Manufacturer
Potens semiconductor
File Size
498.75 KB
Datasheet
PDB3912L-Potenssemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Potens semiconductor
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