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PDB3912L

N-Channel MOSFET

PDB3912L Features

* 30V,7.8A, RDS(ON) =20mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDB3912L General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB3912L Datasheet (498.75 KB)

Preview of PDB3912L PDF

Datasheet Details

Part number:

PDB3912L

Manufacturer:

Potens semiconductor

File Size:

498.75 KB

Description:

N-channel mosfet.

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PDB3912L N-Channel MOSFET Potens semiconductor

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